A velocity-overshoot capacitance model for 0.1 μm MOS transistors
Journal
Solid-State Electronics
Journal Volume
39
Journal Issue
8
Pages
1173-1178
Date Issued
1996
Author(s)
Abstract
This article discusses an analytical velocity-overshoot capacitance model for a 0.1 μm MOS transistor. As verified by 2D simulation results, compared to the conventional model the analytical capacitance model considering velocity overshoot shows a smaller CSG and CDG value, because in velocity overshoot a smaller amount of electrons exist in the channel region. Compared to the CSG case, the larger decrease in CDG when considering velocity overshoot at high VD is the result of higher electron velocity in the post-saturation region. Copyright © 1996 Elsevier Science Ltd.
SDGs
Type
journal article