A velocity-overshoot capacitance model for 0.1 μm MOS transistors

Journal

Solid-State Electronics

Journal Volume

39

Journal Issue

8

Pages

1173-1178

Date Issued

1996

Author(s)

Kuo, J.B.

Chang, Y.W.

Lai, C.S.

DOI

10.1016/0038-1101(96)00028-7

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/501918

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030211488&doi=10.1016%2f0038-1101%2896%2900028-7&partnerID=40&md5=28ca36e53360ebee404c1e419ead195d

SDGs

[SDGs]SDG7

Type

journal article