The Design and Fabrication of High Voltage 4H-SiC Junction Barrier Schottky Diode
Date Issued
2014
Date
2014
Author(s)
Chan, Le-Shan
Abstract
In this research, C-face 4H-SiC substrates were used to fabricate junction barrier Schottky diodes (JBS), which have the forward characteristics of a low voltage drop and fast switching similar to a Schottky barrier diode (SBD). When a JBS is operated in reverse bias mode, it shows the characteristics of low leakage current and high breakdown voltage similar to a P-intrinsic-N diode (PiN). We have designed different kinds of P+ implant patterns such as concentric circles, segmented concentric circle, strips and square arrays with different distance between adjacent P+ implant regions. The different shape designs produce various ratios of Schottky contact area to PN junction areas. Then we analyzed the influence of the ratios on forward voltage drop, forward current density, reverse current density and breakdown voltage in different pattern designs. The segmented concentric circle and square arrays JBS show the better performance in forward operation, because of the higher Schottky contact area percentage. However, the square arrays JBS has higher leakage current. When the space between adjacent P+ implant regions is below 8um, JBS shows the characteristics of lower leakage current and higher breakdown voltage in reverse bias mode. We also measured the characteristics of junction capacitance of SBD to calculate the concentration of N- epi layer, built in potential Vbi and Schottky barrier.
Subjects
4H-SiC
JBS
SBD
P+ implant patterns
Schottky barrier
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-103-R01525063-1.pdf
Size
23.54 KB
Format
Adobe PDF
Checksum
(MD5):913387c774276189fb4ee910aa1fe2ec