High-quality ZnO thin films grown by fast pulsed laser deposition without a buffer layer
Journal
Japanese Journal of Applied Physics, Part 2
Journal Volume
44
Journal Issue
28-32
Date Issued
2005
Author(s)
Abstract
For the first time, a fast pulsed laser deposition (FPLD) process is presented for the epitaxial growth of ZnO thin films on c -plane sapphire substrates. This process is driven by a 355 nm solid-state laser pulsing at 10 kHz. The ZnO thin films grown by FPLD show a width of ∼10 arcsec in the X-ray ω-scan and distinct Pendellösung fringes in the θ–2θ scan of the ZnO(0002) reflection. Photoluminescence spectra reveal sharp donor-bound excitons of ∼5 meV width and free excitons up to n = 2. Compared to conventional (much slower) PLD, 1–20 Hz, the measurements indicate that higher quality ZnO films can be grown by FPLD. In particular, despite the large lattice mismatch, such ZnO films were grown by FPLD directly on sapphire substrates without a buffer layer.
Type
journal article