Enhancing Silicon Luminescence Efficiency with Nano-Structures
Date Issued
2006
Date
2006
Author(s)
Huang, Chu-Ting
DOI
zh-TW
Abstract
Silicon light source is a very important research to improve data transmission rate in VLSI industry. This thesis aims at the research of using silicon nanostructure to enhance the external quantum efficiency of metal-oxide-silicon light emitting diode. We hope this device will become an applicable light source and can be integrated in VLSI in the future.
We design two kinds of structure to reach the purpose. One of the device structures of luminescence diode we use is metal-oxide-silicon. We use SiO2 nano-particles to form the oxide layer. Then, the rough surface would result in 3-D carrier confinement. The light emission efficiency is enhanced and nearly lasing phenomenon is found. The other device structure we use is p-n junction which is made with excimer laser assistance. The junction has more carrier numbers and can avoid the influence of the silicon interface state. Aluminum nano-particles and SOD solution are used to be the diffusion source. The external quantum efficiency could exceed 1×10-5.
Finally, we measure the characteristics of p-n junction device. Metal evaporation is used as electrode on the device. We use Van der Pauw way to calculate the diffusion density and the diffusion layer thickness. Through the investigation of diffusion characteristics, it is expected that p-n junction devices can be improved for the enhancement of light emission from silicon in the future.
Subjects
矽
發光二極體
金氧半
PN接面
準分子雷射
silicon
light emitting diode
MOS
p-n junction
excimer laser
Type
thesis
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