Enhance AlGaN/GaN HEMTs electrical performance by using patterned sapphire substrate
Journal
ACM International Conference Proceeding Series
Pages
88-91
Date Issued
2019
Author(s)
Yi, C.-K.
Chien, C.-Y.
Chan, C.-T.
Pai, C.-W.
CHIEH-HSIUNG KUAN
Abstract
As the market for personal communications services, and fifth generation (5G) mobile systems coming closer to reality, high frequency and high power device, radio frequency (RF) and microwave power amplifiers are beginning to be the focus of attention. However, the material properties of the commercial silicon process have gradually failed to meet this demand. To find the substitute materials becomes important issue. AlGaN/GaN heterojunction own large critical electric field and high electron mobility because of wide bandgap and 2DEG. Therefore, we can apply it to manufacturing high-power and high-frequency device. Currently, GaN has great opportunity for replacing Si.
SDGs
Type
conference paper