A Study of Contact Resistance for Oxide Semiconductor Thin Film Transistors
Date Issued
2010
Date
2010
Author(s)
Lin, Shiuan-Iou
Abstract
Oxide semiconductors have gained much attention in recent years due to their interesting characteristics such transparency, room-temperature growth and high mobility. These benefits render their highly potential for many applications. Amorphous indium gallium zinc oxide (a-IGZO) has the highly potential for applications in thin-film transistor (TFT) industry among all oxide semiconductor materials, because of its high uniformity, low fabrication temperature and good reproducibility.
For TFT devices, energy barriers will exist at the interfaces of conductor- semiconductor contact like source/drain regions. High contact resistance will degrade the performance of devices. Therefore, it is important to be able to measure contact resistance and to avoid the conditions of poor contact.
In this thesis, we measured the contact resistance between a-IGZO and electrode materials, such as Mo, Ti, Cu and indium tin oxide (ITO). First, we measured the specific contact resistivity by the TLM test structure. We discuss the influences of electrode materials, carrier concentrations, contact type, annealing treatment and plasma treatment. Then, we compared varies structures and methods of extracting specific contact resistivity, such as combination of TLM and CER, one dimension CBKR, and two dimension CBKR. Finally, we use the previous results to fabricate a-IGZO TFTs with different contact technologies.
Subjects
oxide semiconductor
thin-film transistor
contact resistance
Type
thesis
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