Junction Temperature-Controlled Spectrum in a Two-Color InGaN–GaN Quantum-Well Light-Emitting Diode
Journal
IEEE Photonics Technology Letters
Journal Volume
18
Journal Issue
24
Pages
2671--2673
Date Issued
2006
Author(s)
Abstract
We demonstrate the dependence of the output spectrum on the Ohmic-contact thickness in a blue/green two-color InGaN-GaN quantum-well (QW) light-emitting diode. By decreasing the metal thickness of the p-type Ohmic contact on the device, the contact resistance is increased and hence the junction temperature is raised. With the junction temperature raised, the probability for the hole to escape from the first QW (green emitting) and be captured by the next QWs is increased for more effective emission of blue light such that the blue/green intensity ratio can be adjusted. The conclusion of higher junction temperature in a sample of a thinner p-type metal layer is consistent with the measurement results of output power versus injection current and current versus applied voltage. The measurement based on the transmission-line method also shows the increasing trend of contact resistance in decreasing the p-type metal thickness. © 2006 IEEE.
Subjects
Dual-color; InGaN-GaN quantum well (QW); Junction temperature; Light-emitting diode (LED)
SDGs
Other Subjects
Hole mobility; Ohmic contacts; Semiconducting indium compounds; Semiconductor quantum wells; Thermal effects; Contact resistance; Injection current; Junction temperature; Light emitting diodes
Type
journal article