Study of InGaN multiple quantum dots by metal organic chemical vapor deposition
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
45
Journal Issue
4 B
Pages
3560-3563
Date Issued
2006
Author(s)
Abstract
We reports a study of InGaN multiple quantum dot layers. Using the in-situ SiNx treatment process, InGaN multiple quantum dot layers were successfully developed. The InGaN multiple quantum dot layers were constructed with SiNx dot mask layers, InGaN dot layers, and GaN cap layers on a 2-µm-thick GaN underlying layer on a sapphire substrate. Optical properties including room temperature photoluminescence (PL), temperature dependent PL, and low power power-dependent PL were examined and discussed. The structure was also analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) line scan.
SDGs
Type
journal article