Interface-engineered resistive switching in Ag/SrTiO3/Nd 0.7Ca0.3MnO3/YBa2Cu 3O7 heterostructures
Journal
European Physical Journal B
Journal Volume
86
Journal Issue
6
Pages
242-245
Date Issued
2013
Author(s)
Abstract
For Ag/Nd0.7Ca0.3MnO3/YBa 2Cu3O7 (Ag/NCMO/YBCO) heterostructures, we investigate effects of an SrTiO3 (STO) buffer layer inserted into the Ag/NCMO interface upon the room erature resistive switching. In comparison with the non-buffered (Ag/NCMO/YBCO) structure, the insertion of the STO buffer layer can greatly enhance the electric-field-induced-resistance (EPIR) effect. The STO-buffered (Ag/STO/NCMO/ YBCO) device can be switched on-and-off between the higher to lower resistance states at an EPIR ratio of 253% with pulsed voltage ±1.5 V and 405% with pulsed voltage ±3.0 V. The enhanced EPIR ratio is attributed to a combined effect of the migration of oxygen vacancies near the interface and ferroelectric polarization of the STO buffer. © 2013 EDP Sciences, Società Italiana di Fisica and Springer-Verlag.
SDGs
Type
journal article