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College of Science / 理學院
Applied Physics / 應用物理研究所
A Ga 2 O 3 passivation technique compatible with GaAs device processing
Details
A Ga 2 O 3 passivation technique compatible with GaAs device processing
Journal
Solid-State Electronics
Journal Volume
41
Journal Issue
4
Pages
643-646
Date Issued
1997
Author(s)
MINGHWEI HONG
Passlack, M
Mannaerts, JP
Harris, TD
Schnoes, ML
Opila, RL
Krautter, HW
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/331362
Type
journal article
