High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes
Journal
Optics Express
Journal Volume
18
Journal Issue
8
Pages
7664
Date Issued
2010-03
Author(s)
Liang-Yi Chen
Ying-Yuan Huang
Chun-Hsiang Chang
Yu-Hsuan Sun
Yun-Wei Cheng
Min-Yung Ke
Cheng-Pin Chen
JianJang Huang
Abstract
We fabricated InGaN/GaN nanorod light emitting diode (LED) arrays using nanosphere lithography for nanorod formation, PECVD (plasma enhanced chemical vapor deposition) grown SiO(2) layer for sidewall passivation, and chemical mechanical polishing for uniform nanorod contact. The nano-device demonstrates a reverse current 4.77nA at -5V, an ideality factor 7.35, and an optical output intensity 6807mW/cm(2) at the injection current density 32A/cm(2) (20mA). Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.
Type
journal article