Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF
Journal
IEEE Electron Device Meeting
Date Issued
2015
Author(s)
M. H. Lee
P.-G. Chen
C. Liu
K-Y. Chu
C.-C. Cheng
M.-J. Xie
S.-N. Liu
J.-W. Lee
S.-J. Huang
M. Tang
K.-S. Li
M.-C. Chen
Description
美國華盛頓
Type
conference proceedings