The Electric-Field-Directed Growth of SiNW and the Fabrication of SiNW Field Effect Transistor
Date Issued
2007
Date
2007
Author(s)
Wang, Jiann-Kai
DOI
zh-TW
Abstract
The growth of silicon nanowires (SiNWs) with different diameters of Au
nanoparticles as catalyst has been systematically investigated via vapor-liquid-solid
(VLS) mechanism using the low pressure chemical vapor deposition. The electric-field-directed growth SiNWs were developed to orient the SiNW to grow in a fixed direction and to the designed position by Coulomb electric force. The SiNWs FET was fabricated successfully. Single crystal undoped and p-type SiNWs have been prepared and characterized by current-voltage measurements.
Subjects
矽奈米線
SiNW
Type
thesis
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