Crystallization Mechanisms of Phase Change (GeSbSn)(100-x)Co-x Optical Recording Films
Resource
Journal of Nanoscience and Nanotechnology, 11(12), 11138-11141
Journal
Journal of Nanoscience and Nanotechnology
Journal Volume
11
Journal Issue
12
Pages
11138-11141
Date Issued
2011
Date
2011
Author(s)
Ou, S.L.
Kuo, P.C.
Ma, S.H.
Shen, C.L.
Tsai, T.L.
Chen, S.C.
Chiang, D.Y.
Lee, C.T.
Abstract
In this study, the (GeSbSn)(100-x0Co(x) films (x = 0-13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The ZnS-SiO2 films were used as protective layers. The thicknesses of the (GeSbSn)(100-x)Co(x) films and protective layer were 100 nm and 30 nm, respectively. We investigated the effects of Co addition on the thermal property, crystallization kinetics, and crystallization mechanism of the GeSbSn recording film. The crystallization temperatures of (GeSbSn)(100-x)Co(x) films were decreased with Co content. It was found that the activation energy of the (GeSbSn)(100-x)Co(x) films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.
SDGs
Type
journal article