Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions

Journal

Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur

Journal Volume

18

Journal Issue

3

Pages

1688-1691

Date Issued

2000

Author(s)

Kortan, AR

Kwo, J

Mannaerts, JP

Krajewski, JJ

Lu, ZH

Hsieh, KC

Cheng, KY

URI

Type

journal article