Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
Journal
Thin Solid Films
Journal Volume
498
Journal Issue
1-2
Pages
118-122
Date Issued
2006
Author(s)
Abstract
The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully. © 2005 Elsevier B.V. All rights reserved.
Subjects
Characterization; Crystal structure; GaN; InGaN; Metalorganic chemical vapor deposition; MOCVD; Nitrides; Phase separation; Photoluminescence; Segregation
SDGs
Other Subjects
Band structure; Crystal structure; Gallium nitride; Metallorganic chemical vapor deposition; Nitrides; Phase separation; Photoluminescence; Sapphire; Temperature measurement; Thin films; PL behavior; Radiative recombination; Segregation; Spatial variation; Semiconducting indium compounds
Type
conference paper