UV Light Emission from GZO/ZnO/GaN Heterojunction Diodes with Carrier Confinement Layers
Resource
Optics Express, 17(25), 22912-22917
Journal
Optics Express
Pages
22912
Date Issued
2009
Date
2009
Author(s)
Ke, Min-Yung
Lu, Tzu-Chun
Yang, Sheng-Chieh
Chen, Cheng-Pin
Cheng, Yun-Wei
Chen, Liang-Yi
Chen, Cheng-Ying
He, Jr-Hau
Abstract
In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO(2) thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg(2+) deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO(2) barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.
Type
journal article
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