Mercury Ion Sensing Using Aptamer-Modified Extended Gate Field-Effect Transistors and a Handheld Device
Journal
ECS Journal of Solid State Science and Technology
Journal Volume
12
Journal Issue
7
Start Page
077005
ISSN
21628769
Date Issued
2023-07
Author(s)
Lee, Chun-Ta
Paulose, Akhil K.
Kuo, Tzuhan
Zeng, Guan-Cheng
Lin, Chia-Kai
Cheng, Yu-Ying
Chen, Jung-Chih
Dong, Guo-Chun
Li, Bor-Ran
Hung, Sheng-Chun
Wang, Yu-Lin
Abstract
In this research, we have designed, fabricated, and characterized an Electrical double-layer (EDL) gated FET platform to detect heavy metals. The electrical double layer (EDL)-gated field-effect transistor-based sensor is garnering interest due to its sensitivity, portable configuration, selectivity, inexpensive operation, as well as their user-friendly nature. the sensing platform designed for rapid detection of Hg2+ using DNA-based aptamers. The investigation was carried out by introducing different concentrations of Mercury ions and a lower detection limit of 1 μM was achieved. The sensor surface was validated with Kelvin Probe Force Microscope (KPFM), which is consistent with the electrical response obtained. Sensor selectivity was studied and exhibited a high sensitivity toward Mercury ion detection. Considering its limit of detection, compatibility, and fast turnaround; the proposed system has the potential to be used to detect Mercury ions instantly for environmental monitoring, where quick and accurate detection of Mercury ions is essential.
Publisher
Institute of Physics
Type
journal article