Germanium Channel MOSFETs and Temperature Dependence of Nickel-Germanide Formation
Date Issued
2007
Date
2007
Author(s)
Lu, Ching-Chun
DOI
en-US
Abstract
In this thesis, three important topics for discussion for advancement of metal-oxide-semiconductor field-effect transistors (MOSFETs) technology were studied, which are germanium channel Schottky-barrier MOSFETs, Germanide, and laser cutting technology of coated glass for complementary metal-oxide-semiconductor (CMOS) image sensors.
Germanium channel was implemented by using Si-cap/ε-Ge/Si substrate and Platinum (Pt) was deposited as metal Schottky-barrier source/drain of p-type MOSFETs. The devices were fabricated by two mask process and overcame the series shortcomings from conventional one mask process. Some useful concepts and adjustments were also provided to improve the performance of the process.
Formation of electrical contacts in Ge-based MOSFETs have been studied, nickel monogermanide (NiGe) is certainly advantageous for its use as contact material in Ge-based devices. The variation of Ni/Ge structure on different orientation substrate as a function of annealing temperature will be shown and discussed.
From the experiment, it has been conferred the tradeoff of the coated glass by different laser cutting method. We will try to find the proper condition by different laser cutting method and discuss its effect on coated glass by the transmission spectrum.
Subjects
場效電晶體
蕭特基能障
互補式金氧半電晶體
金屬鍺化物
透明膜玻璃
MOSFET
Schottky-barrier
CMOS
monogermanide
coated glass
Type
thesis
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