An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices
Resource
SOI Conference, 1993. Proceedings., 1993 IEEE International
Journal
1993 IEEE International SOI Conference, 1993
Pages
-
Date Issued
1993-10
Date
1993-10
Author(s)
DOI
N/A
Abstract
This paper reports an analytical threshold voltage model for SiGe-channel ultrathin SOI PMOS devices. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at the top of the field oxide. © 1993 IEEE
Other Subjects
Computer simulation; Mathematical models; MOS devices; Semiconductor device models; Semiconductor device structures; Semiconductor doping; Silicon on insulator technology; Voltage measurement; Back gate bias; PISCES analytical model; Silicon germanium channel ultrathin metal oxide semiconductor device; Threshold voltage; Semiconducting silicon compounds
Type
journal article
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