High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping
Journal
Digest of Technical Papers - Symposium on VLSI Technology
Journal Volume
2020-June
Date Issued
2020
Author(s)
Abstract
We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um. ? 2020 IEEE.
Subjects
Layered semiconductors; Molybdenum compounds; Monolayers; VLSI circuits; Gate length; Gate oxide; K omegas; On currents; Subthreshold swing; Hafnium compounds
Type
conference paper