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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Formation of SiCH 6-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition
Details
Formation of SiCH 6-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition
Journal
Journal of Applied Physics
Journal Volume
98
Journal Issue
7
Date Issued
2005
Author(s)
Lee, S.W.
Chueh, Y.L.
Chen, L.J.
Chou, L.J.
Chen, P.S.
Tsai, M.-J.
CHEE-WEE LIU
DOI
10.1063/1.2060951
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/502102
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-27144444695&doi=10.1063%2f1.2060951&partnerID=40&md5=2ebac42c6d3af86627523171781da9f8
Type
journal article