Self-aligned top-gate amorphous In-Ga-Zn-O thin film transistors
Journal
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages
67-68
Date Issued
2008
Author(s)
Abstract
We report self-aligned co-planar top-gate IGZO TFTs with using typical lithography and etching techniques. The fabrication involves no back-side exposure, and thus is more compatible with the typical TFT manufacturing.
Type
conference paper