Suppression of GeO x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
Journal
RSC Advances
Journal Volume
9
Journal Issue
2
Pages
592-598
Date Issued
2019
Author(s)
Abstract
. Hence, significant enhancement of the electrical characteristics of Ge metal-oxide-semiconductor (MOS) capacitors was achieved with a two-orders-of-magnitude reduction in the gate leakage current, a 34% enhancement of the MOS capacitance, and a lower interfacial state density. The results indicate that the AlN buffer layer is effective in providing a high-quality interface to improve the electrical performance of advanced Ge MOS devices.
SDGs
Publisher
Royal Society of Chemistry
Type
journal article