Interacting Phonons between Layers in Raman Spectra of Carbon Nanotubes inside Boron Nitride Nanotubes
Journal
Journal of Physical Chemistry Letters
Journal Volume
14
Journal Issue
45
Start Page
10263
End Page
10270
ISSN
19487185
Date Issued
2023
Author(s)
Gulo, Desman Perdamaian
Chen, Weiliang
Wang, Shuhui
Liu, Ming
Kauppinen, Esko I.
Maruyama, Shigeo
Chang, Yuming
Saito, Riichiro
Liu, Hsianglin
Abstract
We present the resonant Raman spectra of a single-wall carbon nanotube inside a multiwall boron nitride nanotube (SWNT@BNNT). At EL = 1.58 eV, SWNT@BNNT exhibited resonant Raman spectra at 807 (ωBN) and 804 cm-1 (ωGr). Their intensities almost disappeared at EL = 2.33 eV. We assigned ωBN to the out-of-plane BN phonon mode that coupled with ωGr. At EL = 4.66 eV, the G+ and G- bands of the SWNT@BNNT red-shifted 3.8 cm-1 compared with the SWNT, suggesting the interwall interactions between the in-plane modes of SWNT and BNNT. Moreover, the E2g mode of the BNNT in SWNT@BNNT appeared at 1370.3 ± 0.1 cm-1, which is undistinguishable for EL < 3 eV because of the overlap with the D band frequency. The assignment of the present Raman spectra was confirmed through the first-principles calculations.
Subjects
Boron Nitride
Iii-v Semiconductors
Nitrides
Phonons
Red Shift
Single-walled Carbon Nanotubes (swcn)
Band Frequencies
Boron Nitride Nanotubes
First Principle Calculations
In-plane Modes
Interwall Interaction
Out-of-plane
Phonon Mode
Red-shifted
Resonant Raman
Single Wall
Raman Scattering
Boron Nitride Nanotube
Carbon Nanotube
Single Walled Nanotube
Article
Controlled Study
Phonon
Publisher
American Chemical Society
Type
journal article