Bilayer graphene by chemical vapor deposition under atmospheric condition
Date Issued
2014
Date
2014
Author(s)
Siao, Yu-Jhe
Abstract
Monolayer graphene has extraordinary electron mobility, but with zero band gap, it is hard to apply on nanoscale electronics. Although bilayer graphene has lower mobility than monolayer, band gap can be controlled if an electric displacement field is applied to the two layers precisely, make it has good flexibility in design of nanoscale electronics. Literature about synthesis of uniform bilayer graphene layers is few now, so we try to grow stable bilayer graphene by adjusting parameter using chemical vapor deposition.
I found that at 1000°C, hydrogen, argon, and methane equals to 10sccm, 500sccm, and 7.5sccm can grow bilayer graphene with high coverage and bilayers. Copper was not acid washing before growth, which is different from other paper. We found that acid washing introducing difficulty to the control of layer. The mobility of bilayer graphene is 913.2 cm^2 / V .s, which is similar to mobility of bilayer graphene exfoliated from graphite. That means bilayer graphene grown by this research with high quality.
Subjects
雙層石墨烯
能隙
常壓化學氣相沉積法
銅箔
遷移率
Type
thesis
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