Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes
Resource
Applied Physics Letters 77 (26): 4347-4349
Journal
Applied Physics Letters
Journal Volume
77
Journal Issue
26
Pages
4347-4349
Date Issued
2000
Date
2000
Author(s)
Abstract
We report the visible electroluminescence at room temperature from metal-oxide-silicon tunneling diodes. As biased in the Fowler-Nordheim regime, the electrons tunnel from the gate electrode through the ultrathin oxide and reach the Si anode with sufficiently high energy. The hot electrons cause the impact ionization, and generate the secondary hot electrons and hot holes in Si substrates. The visible light comes from the radiative recombination between the secondary hot electrons and hot holes, and the hot carrier recombination model can fit the visible electroluminescence spectra. © 2000 American Institute of Physics.
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