High Performance ZnO Thin Film Transistors Fabricated on Both Glass and Flexible Substrates
Journal
ECS Transactions
Date Issued
2007
Author(s)
Abstract
ZnO-based thin film transistors (TFTs) fabricated on both glass and flexible substrates are investigated. The ZnO thin film mentioned in this entire work is deposited by RF magnetron sputtering with the presence of O2 at low deposition rate and low temperature. For TFT on glass, the IDS is as high as 1 mA when biased at the saturation region VDS = 10-20 V and VGS = 5 V without any post thermal anneal. The Ion/Ioff ratio is . We believe the results are among the best ZnO TFTs ever obtained. For TFT on plastic, all the patterns are defined by standard photolithography. The IDS - VDS and IDS - VGS curves along with optical transmission of the whole structure are presented in this paper.
Type
conference paper