Dual Polish Rate With Parameters optimization in Face upward Chemical Mechanical Polish System
Date Issued
2004
Date
2004
Author(s)
Lin, Chia-Chuan
DOI
zh-TW
Abstract
Abstract
With the shrinkage of CMOS length size, CMP has already became a key technology for semiconductor process. Recently, so many researches focus on the scheme of the polishing and try to develop the rule to build the model of burnishing.
It’s essential to build a reasonable polish mechanism to predict the result. In the paper first we analyze and compare the model of mechanical polish and fix the model to approximate the real data from fabrication. Then, the paper provide a dual polish method with parameters optimization and study the main parameters (pressure , rotation speed ,initial non-planarization , pad size, pad deformation ).Using the method we could reduce the non-planarization to match the CMP process requirement .
The method provides the reasonable simulation data to adjust the CMP machine or design a CMP machine. Wish there will be a real Face upward CMP machine to verify the simulation result from the paper.
Subjects
化學機械研磨
最佳化
optimization
CMP
chemical mechanical polish
Type
thesis
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