Dual-wavelength semiconductor laser with 191 nm mode spacing
Resource
Proceedings of SPIE 5365: 21
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
5365
Journal Issue
21
Pages
21-28
Date Issued
2004
Date
2004
Author(s)
Huang, Chi-Chia
Abstract
A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7°C. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.
SDGs
Type
conference paper
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