Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase Epitaxy
Resource
Journal of Applied Physics, v.74, p.3464-3469
Journal
Journal of Applied Physics
Journal Volume
v.74
Pages
3464-3469
Date Issued
1993
Date
1993
Author(s)
Abstract
The photoluminescence (PL) spectra of the AlGaAs/GaAs/AlGaAs quantum well structures grown by two different liquid phase epitaxy methods are studied. It is found that the supersaturation of the melt used to grow the top AlGaAs barrier can significantly influence the abruptness of the AlGaAs/GaAs interface. The sample of two-phase method which melt has less supersaturation shows larger PL linewidth and a special high energy shoulder. When temperature increases, the special high energy shoulder gradually shrinks. On the other hand, the sample of large supersaturation has narrower PL linewidth and does not have high energy shoulder. Local quantized states due to the serious interface fluctuaction are used to explain the PL characteristics of the sample grown by the two-phase method.
SDGs
Type
journal article