Publication: Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wells
| cris.lastimport.scopus | 2025-05-05T22:21:44Z | |
| cris.virtual.department | Applied Physics | en_US |
| cris.virtual.department | Center for Condensed Matter Sciences | en_US |
| cris.virtual.department | Electronics Engineering | en_US |
| cris.virtual.department | Physics | en_US |
| cris.virtual.orcid | 0000-0003-4657-0933 | en_US |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.orcid | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| dc.contributor.author | Passlack, M. | en_US |
| dc.contributor.author | MINGHWEI HONG | en_US |
| dc.contributor.author | Harris, T.D. | en_US |
| dc.contributor.author | Mannaerts, J.P. | en_US |
| dc.contributor.author | Vakhshoori, D. | en_US |
| dc.contributor.author | Schnoes, M.L. | en_US |
| dc.date.accessioned | 2019-12-27T07:49:57Z | |
| dc.date.available | 2019-12-27T07:49:57Z | |
| dc.date.issued | 1998 | |
| dc.identifier.doi | 10.1109/3.658720 | |
| dc.identifier.scopus | 2-s2.0-0031999499 | |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/443491 | |
| dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031999499&doi=10.1109%2f3.658720&partnerID=40&md5=a01389a29b323e94cae95efcdc7043a8 | |
| dc.relation.ispartof | IEEE Journal of Quantum Electronics | |
| dc.relation.journalissue | 2 | |
| dc.relation.journalvolume | 34 | |
| dc.relation.pages | 307-310 | |
| dc.title | Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wells | |
| dc.type | journal article | en |
| dspace.entity.type | Publication |