Spin injection from Ni thin film and Fe3O4 nanoparticle into InGaN/GaN nanorod light-emitting diode
Date Issued
2012
Date
2012
Author(s)
Ho, Cheng-Yu
Abstract
The motivation of this thesis is to compare the performance of the degree of circularly polarized light between conventional thin film spin-LED and nanorod spin-LED. In our experiment, we compare the degree of circularly polarized light for the thin film and nanorod spin-LEDs, which is composed of InGaN/GaN multiple quantum wells, under an external magnetic field by photoluminescence and electroluminescence. We also deposit the Fe3O4 nanoparticles into the space between nanorods in order to enhance the degree of circularly polarized light arising from nanorod spin-LED.
The quantum confined stark effect will gradually vanish and confined potential will become more symmetric as the thin film multiple quantum wells are etched into the nanorod structure. Thus the spin coherent time will become longer in quantum well. In addition, the efficiency of spin valve will increase after the deposition of Fe3O4 nanoparticles. Due to the increment for both the spin coherence time and efficiency of spin valve, our results show that the degree of circularly polarized light of the nanorod spin-LED with Fe3O4 nanoparticles under low external magnetic field and room temperature can be more than 10%. Its excellence performance and practical working condition make nanorod spin-LED becomes a potential spin device.
Subjects
InGaN/GaN nanorod multiple quantum wells
Quantum confined stark effect
Rashba spin-orbit interaction
Spin valve
Fe3O4 nanoparticle
Type
thesis
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