Fabrication of sub-micron DBR laser diode with PEC etching on p-type Gallium Nitride
Date Issued
2006
Date
2006
Author(s)
Tu, Wen-Hsun
DOI
zh-TW
Abstract
In the last decades, gallium nitride materials have drawn much attention and have great potential for the UV-Blue light emitting devices. Due to the disadvantages such as material damages in dry etch, new fabrication processes are needed to enhance the efficiency and lifetime of light emitting devices. This thesis explores the use of wet chemical etching technique as processing tool for GaN–based semiconductors. The general properties of the photo-electro-chemical (PEC) etching have been inspected and described in detail for application purpose. Crystallographic etching properties were presented and provided a useful route to different kinds of application. The blue laser diode with distributed Bragg reflectors (DBR) was successfully obtained by the PEC method. The fabricated devices were analyzed with optically pumped experiment apparatus , and compared with the same devices fabricated by ICP-RIE . Theoretical investigation of these devices have been proposed and demonstrated in the same thesis. The general conclusions and possible applications in the future were discussed in the last chapter of this work.
Subjects
氮化鎵
光致電化學蝕刻
雷射
布拉格反射鏡
GaN
PEC
DBR
laser
etching
Type
thesis
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