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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy
Details
Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy
Journal
2010 international electron devices and materials symposia
Pages
C3-6
Date Issued
2010-11
Author(s)
J. S. Tzeng
C. J. Wu
C. J. Hong-Liao
HAO-HSIUNG LIN
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/359146
Type
conference paper