Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
8
Journal Issue
2
Pages
63-65
Date Issued
1998
Author(s)
Abstract
Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dB/spl Omega/ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dB/spl Omega/ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.
SDGs
Type
journal article