Numerical study of electromagnetic properties of the 3D through silicon via with high aspect ratio
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
12496
ISBN
9781510660991
Date Issued
2023-01-01
Author(s)
Abstract
Understanding the electromagnetic properties of the 3D through silicon via (TSV) with high aspect ratio is important for the 3D IC stacking and packaging. The electromagnetic simulations were used to explore the TSV with different model parameters, such as top critical dimension, bottom critical dimension, hole depth, sidewall slope, sidewall roughness, curvature of the base, and light wavelength. A model is proposed to parameterize TSV structure features. The simulation results corresponding to these model parameters are discussed.
Subjects
deep ultraviolet (DUV) | finite-difference time-domain (FDTD) | rigorous coupled-wave analysis (RCWA) | through silicon via (TSV)
Type
conference paper