Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

Resource

APPLIED PHYSICS LETTERS, 100(17), 172110

Journal

Applied Physics Letters

Pages

172110

Date Issued

2012

Date

2012

Author(s)

Lin, T.D.

Chang, Y.H.

Lin, C.A.

Huang, M.L.

Lee, W.C.

Kwo, J.

DOI

URI

Type

journal article

File(s)

Name

09.pdf

Size

23.42 KB

Format

Adobe PDF

Checksum

(MD5):d414de7cb41148b3975b0a2b2cf01d98