Field Enhancement in Doped Semiconductor Structures at Terahertz Frequencies
Date Issued
2009
Date
2009
Author(s)
Chen, Wei-Hao
Abstract
After the terahertz wave generation was found, many research and important applications in terahertz waves have been published and proposed. We study the field enhancements in the waveguide structures by doped semiconductor material, and analyze their electromagnetic fields for different structures under the plane wavellumination or the short pulse. We design several doped silicon slots cavity and slot chains with large field enhancement, and describe their physical mechanism. Our designed structures can be investigated by the fabrication and experiment setup in the future, and used for the devices in the applications of bio-image, microscopy, sensor, detector, security, and high-speed electronics.
Subjects
teraherz
cavity
Drude model
indium arsenide
silicon
field enhancement
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-98-R96525021-1.pdf
Size
23.53 KB
Format
Adobe PDF
Checksum
(MD5):64b7d702a0da351dea39aa870aa9ea82