Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric
Journal
2002 12th International Conference on Molecular Beam Epitaxy
Pages
187-188
Date Issued
2002
Author(s)
Yang, B.
Ye, P.D.
Kwo, J.
Frei, M.R.
Gossmann, H.-J.L.
Mannaerts, J.P.
Sergent, M.
Ng, K.
Bude, J.
Type
conference paper