Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields
Journal
Physical Review B
Journal Volume
111
Journal Issue
4
ISSN
2469-9950
Date Issued
2025-01-16
Author(s)
DOI
10.1103/PhysRevB.111.L041301
Abstract
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultraclean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid.
Publisher
American Physical Society
Type
journal article