Interfacial trap characteristics in depletion mode GaAs MOSFETs
Journal
Journal of Crystal Growth
Journal Volume
301
Pages
1009-1012
Date Issued
2007
Author(s)
Abstract
The trap-related characteristics in depletion mode GaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) were studied using two different electrical characterization techniques of current collapse and low-frequency noise measurements. With a high-quality MBE-grown gate oxide layer Ga2O3(Gd2O3)∼30 nm thick in situ on GaAs, an extremely small drain current collapse factor ΔImax of less than 5% was observed even with a high drain bias of 16 V. In addition, no kink effect was observed in the low-frequency AC I-V characteristics. Moreover, a normalized drain noise current spectral density in the range of 10-11-10-9 Hz-1 (at 10 Hz) was obtained, which is comparable to modern 0.13-μm Si complementary MOS (CMOS) technology under similar biasing conditions. The results indicate low interfacial trap densities for the studied GaAs MOSFETs. © 2007 Elsevier B.V. All rights reserved.
Type
journal article