Semiconductor-Laser Amplifiers with Bandwidth over 300 nm
Journal
Optics InfoBase Conference Papers
ISBN
9781557528209
Date Issued
2000-01-01
Author(s)
Abstract
With properly designed sequence of nonidentical multiple quantum wells made of InGaAsP/InP materials, the spectrum could cover from less than 1.3 µm to over 1.55 µm with the FWHM width as broad as 315 nm.
Type
conference paper