Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy

Resource

Journal of Vacuum Science & Technology B 17 (5): 1997-2000

Journal

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Journal Volume

17

Journal Issue

5

Pages

1997-2000

Date Issued

1999-01

Author(s)

Wang, Jyh-Shyang

Lin, Hao-Hsiung

DOI

URI

Type

journal article