Effect of oxide thickness on the two-state characteristics in MIS(p) tunnel diode with ultrathin metal surrounded gate
Journal
ECS Journal of Solid State Science and Technology
Journal Volume
8
Journal Issue
12
Pages
N214-N219
Date Issued
2019
Author(s)
Abstract
In this work, the transient two-state currents of ultrathin metal surrounded gate (UTMSG) metal-insulator-semiconductor (MIS) tunnel diodes, in which the periphery portion of the gate metal thickness is about 10 nm, with various oxide thicknesses were studied. The electrical characteristics and transient two-state characteristics in the UTMSG MIS and the regular gate metal-insulator-semiconductor (RG MIS) tunnel diodes with various oxide thicknesses were compared and it was found that the UTMSG MIS devices can maintain larger two-state current window within appropriate oxide thicknesses range of 27 Å ∼ 30 Å. The electrical properties of the UTMSG MIS devices are very sensitive to oxide thickness. Also, it was found that the I-V current hysteresis is closely related to the transient two-state characteristics because of the RC delay at edge.
SDGs
Type
journal article