Growth and electrical characteristics of liquid-phase deposited SiO2 on Ge
Journal
Electrochemical and Solid-State Letters
Journal Volume
6
Journal Issue
2
Date Issued
2003
Author(s)
Abstract
The liquid-phase deposition (LPD) of at 50°C on Ge substrates is investigated. Silicic acid is used to saturate hydrofluorosilicic acid at 30°C and this shortens the time required for solution preparation to 3 h. The growth rate of LPD oxide on Ge is much slower than that of LPD oxide on Si at the beginning of the deposition process, while surface roughness of LPD oxide on Ge is larger than that of LPD oxide on Si. A metal-oxide-semiconductor tunneling diode on Ge is fabricated using the LPD oxide. The tunneling current of the Ge diodes at inversion bias increases as LPD oxide thickness increases, indicating that the trap density in the LPD oxide increases with increasing oxide thickness, and the current transport is dominated by the trap assistant tunneling. © 2002 The Electrochemical Society. All rights reserved.
Type
journal article