Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides
Journal
Applied Physics A: Materials Science and Processing
Journal Volume
115
Journal Issue
3
Pages
837-842
Date Issued
2014
Author(s)
Abstract
A clear current kinked phenomenon was observed in Al/SiO2/Si(p) structures with nanoscale (<2.5 nm) SiO2 in a forward biased region. It was found that the kinked points are dependent on oxide thickness and are not the same as flat-band voltages. A model regarding the oxide voltage dropping efficiency with the consideration of interface trap density (D it Dit) and effective charge number density (Q eff / q Q eff/q) was proposed for the observation. It is noted that the kinked point is severely affected by the oxide quality and uniformity. However, Al/SiO2/Si(n) structures in a forward biased region do not exhibit this current kinked phenomenon because the dropping behavior of oxide is absolutely different from Al/SiO2/Si(p) structures. © 2013 Springer-Verlag Berlin Heidelberg.
Type
journal article