Electroless deposition of Cu thin films with CuCl2-HNO3 based chemistry - I. Chemical formulation and reaction mechanisms
Journal
Journal of the Electrochemical Society
Journal Volume
148
Journal Issue
5
Pages
C327-C332
Date Issued
2001
Author(s)
Abstract
This paper describes an acid-based electroless Ou deposition system employing CuCl2-HNO3 chemistry in a HF-NH4F buffer solution. With the help of nitric acid. Cu can be deposited on SiO2/Ta/TaN substrate without the insertion of a Cu seed layer. The deposition rale is found to decrease with increasing [HNO3] in the solution. The roles of [NO3], [F], [Cl], [NH4], Si, and TaN in the system are identified based on split experiments. Si acts as the reducing agent while [F] and [Cl] ions form complexions with and transmit electrons to Cu2+. Overall, a deposition rale of 2700 Å/min with a Cu resistivity of 2.35 μΩ cm can be achieved. © 2000 The Electrochemical Society.
SDGs
Type
journal article