Structural and electrical property of indium tin oxide grown on M、R-sapphire by fast plused laser deposition
Date Issued
2007
Date
2007
Author(s)
Lu, Tso-Wen
DOI
zh-TW
Abstract
Indium tin oxide (ITO) thin films have been deposited using fast plused laser deposition (FPLD) on M-plane(100) and R-plane(012) sapphire under identical conditions. The oxygen pressure (PO2) was varied from 5x10-3 torr to 5x10-5 torr while the substrate temperature (Ts) from 700oC to 500oC for the growth conditions used in this study.
The structural property of ITO films was analyzed by X-ray powder diffraction, high resolution rocking curve and φ-scan. It has been found that the preferred orientation of these films strongly depends on the growth conditions.
At high substrate temperature and high oxygen pressure, single-crystalline (110)ITO were grown on M-plane and R-plane sapphire substrates successfully. Otherwise, poly-crystalline ITO including (111) and (100) appeared at low substrate temperature or low oxygen pressure.
In φ-scan measurement, the two-fold {662}ITO coincide with the {110}of M-plane substrate, indicating an in-plane epitaxial relationship: ITO[001]//Al2O3[020] and ITO[1-10]// Al2O3[001]. On the other hand, for the R-plane substrate, the {662}ITO appears on both side of {125}Al2O3 by ~47o, indicating an in-plane epitaxial relationship: ITO[001]//Al2O3[2,1,-1/2] 、ITO[1-10]//Al2O3[-4/3,4/3,-2/3] or ITO[001]//Al2O3[1,-1,1/2]、ITO[1-10]//Al2O3[8/3,4/3,-2/3].
The electrical property was measured by the Hall effect and four-point probe technique. All of the samples have low electrical resistivity on the order of 10-4 (Ωcm), high carrier concentration of about 1020 (cm-3), and mobility ranging from 60 to 100 (cm2/Vs).
Subjects
銦錫氧化物
M面
R面
氧化鋁
交界面
ITO
M-plane
R-plane
sapphire
in-plane
Type
thesis
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