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College of Science / 理學院
Physics / 物理學系
Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substrates
Details
Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substrates
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
2
Date Issued
2007
Author(s)
CHI-TE LIANG
DOI
10.1063/1.2430778
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-33846260161&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/330966
SDGs
[SDGs]SDG7
Type
journal article